Ogawa Eri | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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概要
- Ogawa Eriの詳細を見る
- 同名の論文著者
- Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japanの論文著者
関連著者
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Ogawa Eri
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Nakazawa Satoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Tetsuzo
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Ogawa Eri
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Tanaka Tsuyoshi
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
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Nakazawa Satoshi
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
著作論文
- Variation of Chemical and Photoluminescence Properties of Mg-Doped GaN Caused by High-Temperature Process
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition