200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
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概要
- 論文の詳細を見る
Use of Si substrates for the fabrication of microwave AlGaN/GaN heterojunction field effect transistors (HFETs) has been strongly desired for the low cost fabrication. The performance so far has never been satisfactory in view of the output power and the gain as compared with those on SiC substrates. In this paper, AlGaN/GaN HFETs on Si with high output power of 203 W and high linear gain of 16.9 dB at 2.5 GHz are demonstrated. The HFETs have field plates to reduce the feedback capacitance leading to higher gain, of which a new design of the field plates enables high power as well. The structural design is based on the equivalent circuit model using the device parameters extracted from the small signal RF performances. Here, it is found that shortening the field plate length down to 0.6 μm results in the high output power owing to the stable output impedance for various drain voltage. Note that the conditions of the epitaxial growth are optimized to achieve high current density of 850 mA/mm with both the high mobility and high sheet carrier concentration. The device processing is established so as to achieve the high power operation free from the current collapse. The device can be operated at the drain voltage as high as 50 V, which enables the 200 W output power. The presented AlGaN/GaN HFETs are very promising for various microwave applications including cellular base stations, which would lower the system cost taking advantage of cost-effective Si substrates.
- 2012-08-25
著者
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Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ANDA Yoshiharu
Semiconductor Device Research Center, Matsushita Electronics Corporation
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Ishida Masahiro
Semiconductor Device Research Center Matsushita Electronics Corporation
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Nakazawa Satoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Tetsuzo
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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Nishijima Masaaki
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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Tsurumi Naohiro
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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