A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrate a 26 GHz SiGe bipolar complementary metal oxide semiconductor (BiCMOS) transceiver chipset for short-range spread-spectrum (SS) radar system. The integrated frequency triplers lower the local oscillation frequency down to 8.8 GHz, and eliminate the carrier leak in the transmitting signal which enables high sensitivity. The on-chip balun connected to the mixer demodulating by the pseudo noise (PN) code in the receiver increases the dynamic range of the receiving signal. Low-loss transmission lines on Si substrate are fabricated by post-passivation interconnection process using thick benzocyclobutene (BCB). We have confirmed the transmitting signal having spread-spectrum with suppressing the carrier leak, the improvement of the dynamic range of the receiver, and the reduction of the transmission loss on Si substrate. We have demonstrated the operation of the 26 GHz ultra wide band (UWB) SS radar, corresponding to detecting a human located at 7 m away from the system.
- 2011-04-25
著者
-
Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Fukuda Takeshi
Advanced Technology Research Laboratories Panasonic Co. Ltd.
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
-
Kawai Yasufumi
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Kaibara Kazuhiro
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Kaibara Kazuhiro
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
-
Ujita Shinji
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Negoro Noboru
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
NEGORO Noboru
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
関連論文
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- High-resolution UWB Doppler radar interferometric imaging algorithm for multiple moving targets with smoothed pseudo Wigner distribution(Radar Technology,ICSANE 2010 (International Conference on Space, Aeronautical and Navigational Electronics))
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
- Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
- Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology
- Low-Power Technology for GaAs Front-End ICs
- Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
- Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
- A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
- High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents
- 0.15-μm T-Shaped Gate MODFETs Using BCB as Low-k Spacer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
- Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3
- Overview and Future Challenge of Ferroelectric Random Access Memory Technologies
- High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
- Electron Backscatter Diffraction Analysis for Polarization of SrBi2(Ta,Nb)2O9 Ferroelectric Capacitors in Submicron Small Area
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
- Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors
- K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
- Pedestrian Imaging Using UWB Doppler Radar Interferometry