High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
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概要
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We have integrated the surface photonic crystal (PhC) on GaN-based blue light-emitting diodes (LEDs) for the first time in order to enhance the extraction efficiency of the LEDs. With the finite-difference time-domain method, we have calculated 3.6-fold enhancement in light output. The theoretical calculations have revealed that the optimum pitch of the PhC is much longer than the emission wavelength when the distance between the PhC and the active layer of LEDs is short. This design enables PhC formation on chemically stable GaN surfaces. In addition, an indium tin oxide (ITO)-based transparent electrode is formed directly on the surface of PhC to realize light emission from the whole area of the LED. The fabricated PhCs have increased the light output of blue LEDs by 1.5 times compared with the LEDs without PhC. We have demonstrated that PhC will realize highly efficient solid-state lighting with GaN-based LEDs.
- 2004-08-15
著者
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Takigawa Shinichi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Yuri Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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TAMURA Satoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Orita Kenji
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Takizawa Toshiyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Orita Kenji
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Takigawa Shinichi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Takizawa Toshiyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Yuri Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Ueda Daisuke
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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Tamura Satoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan
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