Analysis of Unstable Two-Phase Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model

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概要

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• The Group III-nitride ternary system is studied with respect to an unstable two-phase region in the phase field. The unstable two-phase region in analyzed using a strictly regular solution model. The interaction parameter used in the analysis is obtained from a strain energy calculation using the valence force field model, modified for both wurtzite and zinc-blende structures to avoid overstimation of the strain energy. The structural deviation from an ideal wurtzite structure in InN, GaN, and AIN is also taken into account in our model. According to the calculated results of the interaction parameters, the critical temperature for wurtzite InGaN, InAIN, and GaAIN are found to be 1967K, 3399K, and 181K, respectively. This suggests that, at a typical growth temperature of 800-1000℃ a wide unstable two-phase region exists in both InGaN and InAIN. In order to show the validity of our calculation results, we compare the calculated results and the experimental results using the calculation of the interaction parameter for the InGaAs system. The calculated results agree well with the experimental results.

• 社団法人応用物理学会の論文
• 2000-09-15

著者

• Itoh Kikuo

  Faculty Of General Education Kumamoto University

• Itoh Kimitaka

  Plasma Physics Laboratory Kyoto University

• Takayama Tomoo

  Department Of Metallurgy Kyoto University

• Itoh K

  Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.

• Itoh Kunio

  Semiconductor Research Laboratory Matsushita Electronics Corporation

• Yuri M

  Semiconductor Devices Research Center Semiconductor Co. Matsushita Electric Industrial Co. Ltd.

• Yuri Masaaki

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• S.harris Jr

  Solid State Electronics Laboratory Sis-x329 Stnford University

• Takayama Toru

  Solid State Electronics Laboratory Sis-x329 Stnford University:semiconductor Devicr Research Center

• Baba Takaaki

  Semiconductor Devicr Research Center Semiconductor Company Matsushita Electronics Corporation

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