Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl₃ and NH₃

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概要

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• Thick epitaxial growth of GaN by vapor phase epitaxy (VPE) is an indispensable technique to form GaN substrates which have been commonly used for blue-violet GaN-based lasers with sufficiently long lifetime. Although the growth has been established in view of the mass-production of the GaN substrate, the crystal quality has never been sufficiently correlated with the growth conditions. In this paper, the effects of the growth temperatures on the crystal quality of VPE-grown GaN films are studied in detail. It is noted that the GaN films are grown by a single-zone VPE using externally placed GaCl₃ and NH₃ as source precursors. The growth exhibits the growth rate of 14 μm/h at highest and far higher growth rate is possible by increasing the carrier flow rate and/or temperature of the GaCl₃. The experimental results reveal that the surface morphology and optical properties are strongly dependent on the growth temperature. At around 975 °C with very narrow temperature window, very smooth surface together with a very sharp photoluminescence (PL) peak originating from bound excitons is observed. Growth at lower temperatures than the optimized window results in rough surface with many pits on it. Higher temperature results in many cracks and peeling-off on the surface with the sign of three-dimensional growth. Peaks originating from residual acceptors are dominant in the PL spectra of the films with rough surfaces grown at higher or lower temperatures from the optimized window. Flattening the surface of GaN at the optimized temperatures by the enhanced lateral growth is essential to grow thick GaN by the VPE with good crystalline quality free from the incorporation of the residual acceptors.

• 2011-08-25

著者

• Yuri Masaaki

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Ueda Tetsuzo

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Harris James

  Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.

• Ueda Tetsuzo

  Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan

• Yuri Masaaki

  Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan

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