High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Usuda Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ORITA Kenji
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Orita Kenji
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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FUKUSHIMA Yasuyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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TAKASE Yuji
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Takase Yuji
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Fukushima Yasuyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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UEDA Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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