Fukushima Yasuyuki | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
スポンサーリンク
概要
- FUKUSHIMA Yasuyukiの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.の論文著者
関連著者
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Fukushima Yasuyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Usuda Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ORITA Kenji
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Orita Kenji
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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FUKUSHIMA Yasuyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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TAKASE Yuji
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Takase Yuji
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Yasuyuki Fukushima
Semiconductor Device Research Centers, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
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Tetsuzo Ueda
Semiconductor Device Research Centers, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
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UEDA Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
著作論文
- High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents
- High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure