Ueda Tetsuzo | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd

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概要

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著作論文

First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents

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