Tsurumi Naohiro | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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概要
- TSURUMI Naohiroの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltdの論文著者
関連著者
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Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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Uemoto Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Shibata Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Matsuo Hisayoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
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Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
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Matsuo Hisayoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ISHII Motonori
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ishii Motonori
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ANDA Yoshiharu
Semiconductor Device Research Center, Matsushita Electronics Corporation
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Ishida Masahiro
Semiconductor Device Research Center Matsushita Electronics Corporation
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Nakazawa Satoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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Nishijima Masaaki
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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Tsurumi Naohiro
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
著作論文
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates