Tanaka T | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

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著作論文

Pre- and Post-Dispersion Compensation in Long-Haul WDM Transmission System
High Alumina Co-Doped Silica EDFA and Its Gain-Equalization in Long-Haul WDM Transmission System
Gain Equalizer in Long-Haul WDM Transmission System(Special Issue on High-Capacity WDM/TDM Networks)
A Novel Error Control Algorithm for Reducing Transmission Delay in Real-Time Mobile Video Communication (Special Issue on Multimedia Mobile Communication Systems)
A Novel Coherent Preambleless Demodulator Employing Sequential Processing for PSK Packet Signals : AFC and Carrier Recovery Circuits
A Fast Synchronization Scheme of OFDM Signals for High-Rate Wireless LAN
Nomadic Computing Environment Employing Wired and Wireless Networks(Special Issue on Multimedia Communications in Heterogeneous Network Environments)
A Multi-Slot Access Protocol for TDMA-TDD Packet Radio Channel - Application to PHS Packet Data System -
Interference Cancellation Characteristics of a BSCMA Adaptive Array Antenna with a DBF Configuration
Implementation of a Digital Signal Processor in a DBF Self-Beam-Steering Array Antenna
An ASIC Implementation Scheme to Realize a Beam Space CMA Adaptive Array Antenna
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
Characteristics of Built-In Folded Monopole Antenna for Handsets(2004 International Symposium on Antennas and Propagation)
Analysis of Built-In Antennas for Handsets by the Electromagnetic Simulators(Analytical and Simulation Methods for Electromagnetic Wave Problems)
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
Advanced SOI Devices Using CMP and Wafer Bonding
Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS

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