High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
スポンサーリンク
概要
- 論文の詳細を見る
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (poly-AlN) passivation and via-holes through the sapphire substrate. Extremely high blocking voltage (BVds) of 10400V is achieved while maintaining relatively low specific on-state resistance (Ron・A) of 186mΩ・cm^2. Via-holes through chemically stable sapphire formed by novel laser drilling technique enable very efficient layout of the lateral HFET array. The obtained blocking voltage of 10400V is the highest value ever reported for GaN-based transistors. This implies that GaN is advantageous in extremely high voltage application which so far is believed to be very difficult by GaN-based transistors.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
-
LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
-
Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
-
Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
-
Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
-
Uemoto Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Shibata Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Matsuo Hisayoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
-
Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
-
Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
-
Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
-
Matsuo Hisayoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
関連論文
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- サファイア基板上準ミリ波帯AlGaN/GaN MMIC
- C-10-14 サファイア上マイクロストリップ線路を用いた準ミリ波帯AlGaN/GaN MMIC(C-10. 電子デバイス,一般セッション)
- 10400V耐圧AlGaN/GaN HFET(化合物半導体IC及び超高速・超高周波デバイス)
- 10400V耐圧AlGaN/GaN HFET(化合物半導体IC及び超高速・超高周波デバイス)
- Pre- and Post-Dispersion Compensation in Long-Haul WDM Transmission System
- High Alumina Co-Doped Silica EDFA and Its Gain-Equalization in Long-Haul WDM Transmission System
- Gain Equalizer in Long-Haul WDM Transmission System(Special Issue on High-Capacity WDM/TDM Networks)
- Novel High Precision Optoelectronic Device Fabrication Technique Using Guided Fluidic Assembly
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- A Novel Error Control Algorithm for Reducing Transmission Delay in Real-Time Mobile Video Communication (Special Issue on Multimedia Mobile Communication Systems)
- A Novel Coherent Preambleless Demodulator Employing Sequential Processing for PSK Packet Signals : AFC and Carrier Recovery Circuits
- A Fast Synchronization Scheme of OFDM Signals for High-Rate Wireless LAN
- Nomadic Computing Environment Employing Wired and Wireless Networks(Special Issue on Multimedia Communications in Heterogeneous Network Environments)
- A Multi-Slot Access Protocol for TDMA-TDD Packet Radio Channel - Application to PHS Packet Data System -
- Properties of SiO_2-M_xO_y Composites Doped with the Europium(III) Di(1,10-phenanthroline) Complex
- ORMOSIL Composite Phosphors Incorporated with Lanthanide Complexes
- Reversible Valence Change of the Europium Ion Doped in Alkaline-earth Tetraborates
- Interference Cancellation Characteristics of a BSCMA Adaptive Array Antenna with a DBF Configuration
- Implementation of a Digital Signal Processor in a DBF Self-Beam-Steering Array Antenna
- An ASIC Implementation Scheme to Realize a Beam Space CMA Adaptive Array Antenna
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- A GaAs Single Voltage Controlled RF Switch IC
- T-Cell Receptor Gene Structures of HLA-A26-restricted Cytotoxic T Lymphocyte Lines against Human Autologous Pancreatic Adenocarcinoma
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
- Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
- Characteristics of Built-In Folded Monopole Antenna for Handsets(2004 International Symposium on Antennas and Propagation)
- Analysis of Built-In Antennas for Handsets by the Electromagnetic Simulators(Analytical and Simulation Methods for Electromagnetic Wave Problems)
- Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- Advanced SOI Devices Using CMP and Wafer Bonding
- High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
- Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
- High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
- Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
- A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
- High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents
- 0.15-μm T-Shaped Gate MODFETs Using BCB as Low-k Spacer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
- Femtosecond Laser Micromachining of Si-on-SiO2 for Photonic Band Gap Crystal Fabrication
- An Npn AlGaAs/GaAs Collector-up HBT with an H^+ -Implanted High Resistivity Layer under the External p^+ -GaAs Base
- Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3
- Integrated Catadioptric Pickup with Ferrofluidic Cooling Structure
- High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
- Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors
- K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W