An Npn AlGaAs/GaAs Collector-up HBT with an H^+ -Implanted High Resistivity Layer under the External p^+ -GaAs Base

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概要

• 論文の詳細を見る

• The npn AlGaAs/GaAs collector-up (C-up) heterojunction bipolar transistor (HBT) with an H^+ -implanted high reststivity layer (HRL) under the external p^+ -GaAs base layer has been successfully fabricated for the first time. For suppressing parasitic current from the emitter to external base when operating foward bias voltages, the H^+ -implanted HRL is superior to the O^+ -implanted and annealed HRL or the pn junction of wide band gap under the external base.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• INADA Masanori

  Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• Inada Masanori

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• Yanagihara Manabu

  Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd

• Ota Y

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• Ota Yorito

  Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• RYOJI Akira

  Semiconductor Research Center, Matsushita Electric Industrial Co., Lid.

• Ryoji A

  Matsushita Electric Industrial Co. Ltd. Osaka

• Yanagihara Manabu

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd

• Yanagihara Manabu

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• OTA Yorito

  Semiconductor Research Center, Matsushita Electric Industrial Co., Lid.

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• An Npn AlGaAs/GaAs Collector-up HBT with an H^+ -Implanted High Resistivity Layer under the External p^+ -GaAs Base

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