K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
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概要
- 論文の詳細を見る
- 2012-08-01
著者
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Murata Tomohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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ANDA Yoshiharu
Semiconductor Device Research Center, Matsushita Electronics Corporation
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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UEDA Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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MURATA Tomohiro
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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NEGORO Noboru
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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- K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W