Femtosecond Laser Micromachining of Si-on-SiO2 for Photonic Band Gap Crystal Fabrication
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概要
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Femtosecond laser pulses at 387 nm were used to machine Si-on-SiO2 substrates for photonic band gap crystals. With 387 nm ultrashort near-UV pulses, we obtained holes as small as 160 nm, which is smaller than one half of the laser wavelength with only conventional optics. Moreover, a pitch size of 420 nm is also obtained in Si-on-SiO2, which meets the spacing requirement for today’s telecommunication frequency $-1550$ nm. Ultrafast laser micromachining is fast and versatile, thus it is a powerful tool for in-situ microstructure operations such as nanostructuring, repairing, and production industrial applications.
- 2001-05-15
著者
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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LIU Xinbing
Panasonic Corporation of North America
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Li Ming
Panasonic Technologies, Inc., Boston Laboratory 68 Rogers Street, Cambridge, MA 02142, USA
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