Mizutani Takashi | Department Of Quantum Engineering Nagoya University
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概要
関連著者
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Mizutani Takashi
Department Of Quantum Engineering Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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KISHIMOTO Shigeru
Department of Quantum Engineering, Nagoya University
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Mizutani Takashi
Department Of Electronics Faculty Of Engineering Nagoya University
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ITO Masafumi
Department of Pathology, Japanese Red Cross Nagoya Daiichi Hospital
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Mizutani Takashi
Department Of Health Sciences Yamanashi Medical University
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Kishimoto Shigeru
Department Of Quantum Engineering Nagoya University
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Ito Masafumi
Department Of Quantum Engineering Nagoya University
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KURODA Masayuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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SUGIURA Shun
Department of Quantum Engineering, Nagoya University
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Sugiura Shun
Department Of Quantum Engineering Nagoya University
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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NAKAMURA Fumihiko
POWDEC K.K.
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Ito Masafumi
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Eguchi Yasuyuki
Department Of Quantum Engineering Nagoya University
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
著作論文
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
- Inhomogeneous Contact Potential Image of AlGaN/GaN Grown on Sapphire Substrate Measured by Kelvin Probe Force Microscopy : Semiconductors