Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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Itoh Kikuo
Faculty Of General Education Kumamoto University
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Itoh Kimitaka
Plasma Physics Laboratory Kyoto University
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HASHIMOTO Tatsunori
Department of Electronics, Kyushu University
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Hashimoto T
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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SUGINO Takashi
Department of Electrical Engineering, Osaka University
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Itoh K
Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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Itoh Kunio
Semiconductor Research Laboratory Matsushita Electronics Corporation
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Yuri M
Semiconductor Devices Research Center Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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Yuri Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Imafuji O
Semiconductor Co. Kyoto Jpn
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Sugino Takashi
Department Of Electrical Engineering Osaka University
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HASHIMOTO Tadao
Semiconductor Device Research Center, Matsushita Electronics Corporation
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ISHIDA Masahiro
Semiconductor Device Research Center, Matsushita Electronics Corporation
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TERAKOSHI Yoshitami
Department of Electrical Engineering, Osaka University
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IMAFUJI Osamu
Semiconductor Device Research Center, Matsushita Electronics Corporation
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Hashimoto Tadanori
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Ishida Masahiro
Semiconductor Device Research Center Matsushita Electronics Corporation
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Terakoshi Yoshitami
Department Of Electrical Engineering Osaka University
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