TERAKOSHI Yoshitami | Department of Electrical Engineering, Osaka University

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概要

• 同名の論文著者
• Department of Electrical Engineering, Osaka Universityの論文著者

関連著者

• Itoh Kikuo

  Faculty Of General Education Kumamoto University

• Itoh Kimitaka

  Plasma Physics Laboratory Kyoto University

• HASHIMOTO Tatsunori

  Department of Electronics, Kyushu University

• Hashimoto T

  Department Of Chemistry For Materials Faculty Of Engineering Mie University

• SUGINO Takashi

  Department of Electrical Engineering, Osaka University

• Itoh K

  Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.

• Itoh Kunio

  Semiconductor Research Laboratory Matsushita Electronics Corporation

• Yuri M

  Semiconductor Devices Research Center Semiconductor Co. Matsushita Electric Industrial Co. Ltd.

• Yuri Masaaki

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Imafuji O

  Semiconductor Co. Kyoto Jpn

• Sugino Takashi

  Department Of Electrical Engineering Osaka University

• HASHIMOTO Tadao

  Semiconductor Device Research Center, Matsushita Electronics Corporation

• ISHIDA Masahiro

  Semiconductor Device Research Center, Matsushita Electronics Corporation

• TERAKOSHI Yoshitami

  Department of Electrical Engineering, Osaka University

• IMAFUJI Osamu

  Semiconductor Device Research Center, Matsushita Electronics Corporation

• Hashimoto Tadanori

  Department Of Chemistry For Materials Faculty Of Engineering Mie University

• Sugino Takashi

  Department Of Basic Pathology Fukushima Medical University

• Ishida Masahiro

  Semiconductor Device Research Center Matsushita Electronics Corporation

• Terakoshi Yoshitami

  Department Of Electrical Engineering Osaka University

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著作論文

• Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

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