Growth of(111)-Oriented Diamond Grains on Hexagonal GaN

概要

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Oriented growth of diamond on hexagonal GaN thin films has been performed using microwave plasma-assisted chemical vapor deposition(MPCVD). GaN layers grown on sapphire substrates are utilized as a substrate. The growth process consists of three steps:(i)carburization, (ii)bias-enhanced nucleation(BEN)and(iii)deposition. Diamond synthesized on the GaN layer is characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS). The SEM image shows oriented growth of diamond grains on the GaN substrate. A diffraction signal due to the(111)face of diamond is observed at 2θ = 43.9°. A Raman signal peak at 1333cm^<-1> confirms the growth of diamond. In addition, it is found by XRD and XPS measurements that carbon nitride is produced on the GaN substrate without growth of diamond grains.
社団法人応用物理学会の論文
2000-12-01