Effect of Light Irradiation on Galvanic Corrosion of Metal Gate
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概要
- 論文の詳細を見る
Integration of new metal gate materials and high-$k$ dielectrics is required to achieve high-performance and low-stand-by-power applications for the 32-nm-node LSI devices and beyond. Wet processes for removing high-$k$ film involve the risk of enhanced galvanic corrosion at the gate electrode level. We found that the galvanic corrosion of the metal gate in front-end-of-line (FEOL) was markedly enhanced by room light irradiation. The interception of light irradiation during the wet processes in FEOL as well as the wet process in back-end-of-line (BEOL) is also required.
- 2009-04-25
著者
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Kimura Chiharu
Department Of Electrical Engineering Osaka University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Watanabe Daisuke
Department Of Dermatology Aichi Medical University
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Jeong Jong-Hyeon
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Sugino Takashi
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Watanabe Daisuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
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Watanabe Daisuke
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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