Galvanic Corrosion Suppression of High-$k$/Metal Gates Using Organic Solvent-Based Hydrogen Fluoride
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概要
- 論文の詳細を見る
Achieving high-performance and low-stand-by-power applications requires the integration of new metal gate materials and high-$k$ dielectrics into LSI devices with the 45 nm technology node and beyond. The wet processes used for high-$k$ removal involve a risk of enhanced galvanic corrosion at the gate electrode level. In this study, we investigated the galvanic corrosion between polycrystalline silicon (poly-Si) and metal in gate electrodes using organic solvents with hydrogen fluoride (HF). We succeeded in suppressing the corrosion of metal gates using a mixture of HF and isopropyl alcohol (IPA) with high selectivity for high-$k$/SiO2 in the front-end-of-line (FEOL) process for the fabrication of next-generation devices.
- 2008-04-25
著者
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Watanabe Daisuke
Department Of Dermatology Aichi Medical University
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Hotta Saori
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Watanabe Daisuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
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