Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning
スポンサーリンク
概要
- 論文の詳細を見る
In order to reduce corrosion on the Cu surface in post-chemical mechanical polishing (CMP) cleaning, controlling the state of inhibitor layers is indispensable. In this study, to investigate the behavior of inhibitor layers in the cleaning process, Cu--benzotriazole (BTA) layers on CuOX were analyzed by electrochemical measurements and surface analysis. Electrochemical measurements revealed that Cu(I)--BTA can prevent corrosion more efficiently than Cu(II)--BTA, and surface analysis revealed that the Cu(I)--BTA layer is thin, whereas the Cu(II)--BTA layer is bulky. The Cu(I)--BTA layer is effective in preventing corrosion of the Cu surface.
- 2011-05-25
著者
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Harada Ken
Semiconductor Materials Laboratories, Mitsubishi Chemical Corporation, Kitakyushu 806-0004, Japan
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Kawase Yasuhiro
Semiconductor Materials Laboratories, Mitsubishi Chemical Corporation, Kitakyushu 806-0004, Japan
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Hara Makoto
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ito Atsushi
Semiconductor Materials Laboratories, Mitsubishi Chemical Corporation, Kitakyushu 806-0004, Japan
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Suzuki Toshiyuki
Semiconductor Materials Laboratories, Mitsubishi Chemical Corporation, Kitakyushu 806-0004, Japan
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Sakae Rina
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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- 電子線干渉法による磁性材料観察