Suppression of Fluorine Diffusion into Methyl Boron Carbon Nitride Film Using Low-Temperature Etching
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概要
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Boron carbon nitride containing a methyl group (methyl-BCN) is an attractive material as a low-dielectric-constant (low-$k$) interlayer for next-generation LSI interconnections. During dry etching with fluorine-based gases, the fluorine component diffuses into low-$k$ films, especially porous low-$k$ films. Thus, there is concern that residual fluorine induces low-$k$ voiding and Cu corrosion. By low-temperature ($-25$ °C) etching, we have achieved an effective suppression of fluorine diffusion into the methyl-BCN film and a reduction in the amount of fluorocarbon polymer, while maintaining sufficient etching rates of the methyl-BCN film. The low-temperature etching of low-$k$ films can be readily applied to the fabrication of next-generation LSI devices.
- 2010-04-25
著者
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Hara Makoto
Department Of Neurosurgery Ichinomiya Municipal Hospital
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Hidemitsu Aoki
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Chiharu Kimura
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takashi Sugino
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Chiharu Kimura
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Takashi Sugino
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Masuzumi Takuro
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takuro Masuzumi
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Lu Zhiming
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Makoto Hara
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hara Makoto
Department of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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