Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p--i--n Diode
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概要
- 論文の詳細を見る
4H-SiC p--i--n diodes fabricated on the $(000\bar{1})$ C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p--i--n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on $(000\bar{1})$ C-face in comparison with that on (0001) Si-face.
- 2011-04-25
著者
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Tsuchida Hidekazu
Materials Science Research Laboratory Central Research Institute Of Electric Power Industry (criepi)
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Tsuchida Hidekazu
Materials Science Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan
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Nakayama Koji
Power Engineering R&D Center, Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan
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Sugawara Yoshitaka
Power Engineering R&D Center, Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan
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Sugawara Yoshitaka
Power Engineering R&D Center, Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan
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