Formation of Rough GaN Surface by Hydrogen Plasma Treatment and Its Application to Field Emitter : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-03-15
著者
-
Hori Takamitsu
Department Of Biochemistry Faculty Of Pharmaceutical Sciences Hiroshima International University
-
Hori Takamitsu
Department Of Electrical Engineering Osaka University
-
Yamamoto Tomohide
Department Of Electrical Engineering Osaka University
-
SUGINO Takashi
Department of Electrical Engineering, Osaka University
-
KIMURA Chiharu
Department of Electrical Engineering, Osaka University
-
Kimura Chiharu
Department Of Electrical Engineering Osaka University
-
Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
-
Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
関連論文
- CHARACTERIZATION OF A NOVEL METALLOPROTEINASE IN DUVERNOY'S GLAND OF RHABDOPHIS TIGRINUS TIGRINUS
- Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
- Characterization of InGaAs Phosphidized by a Plasma Process
- Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Purification of a Metalloproteinase in the Durvernoy's Glands of Rhabdophis tigrinus by Affinity Column based on Cysteine Switch Mechanism
- Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Expression of endothelin system in neuroblastic tumors : close association of endothelin-1 and endothelin B receptor expression with differentiation of tumor cells
- Sodium azide induces necrotic cell death in rat squamous cell carcinoma SCC131
- Regular expression of osteopontin in granular cell tumor : Distinctive feature among Schwannian cell tumors
- 脾臓と脾被膜上の多発性上皮嚢胞, およびCA19-9, CA125と可溶性IL-2受容体の高い血清値
- Effect of Dietary Essential Fatty Acids on Pulmonary Metastasis of Ascites Tumor Cells in Rats(Biological)
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Formation of Rough GaN Surface by Hydrogen Plasma Treatment and Its Application to Field Emitter : Semiconductors
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices
- Ag Diffusion in Low-$k$ Materials (BCN and SiOC) and Its Challenges for Future Interconnection
- Hepatocyte Growth Factor and Transforming Growth Factor-β Stimulate both Cell Growth and Migration of Human Gastric Adenocarcinoma Cells^1
- Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p--i--n Diode
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Growth of(111)-Oriented Diamond Grains on Hexagonal GaN
- Field Emission Characteristics from Grains and Polycrystalline Films of Phosphorus-Doped Diamond Grown by Chemical Vapor Deposition
- Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Effect of Light Irradiation on Galvanic Corrosion of Metal Gate
- Reconstitution of the Na^+/H^+ Antiporter : A New Method for the Determination of H^+ Efflux from Na^+/H^+ Antiporter-Reconstituted Vesicles
- Enhanced antitumor efficacy of folate-linked liposomal doxorubicin with TGF-β type I receptor inhibitor
- Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier
- Enzymatic Models Hydrolyzing Carbohydrates
- Suppression of SOCS3 increases susceptibility of renal cell carcinoma to interferon-α
- Enhanced Field Emission of Boron Nitride Nanofilms on Roughened GaN Substrates
- Rapid and Highly Sensitive Detection of Bacteria Sensor Using a Porous Ion Exchange Film
- Selective Sensing of Multi-Inorganic Ions Using Ion Exchange Fiber Film
- Putative morphogen, DIF, of Dictyostelium discoideum induces apoptosis in rat pancreatic AR42J cells
- Galvanic Corrosion Suppression of High-$k$/Metal Gates Using Organic Solvent-Based Hydrogen Fluoride
- Overexpression of fatty acid synthase in human urinary bladder cancer and combined expression of the synthase and Ki-67 as a predictor of prognosis of cancer patients
- Interphase cytogenetic analysis of lung adenocarcinomas with bronchioloalveolar pattern
- Electrochemical Etching of Ru Film for Bevel Cleaning of Back End of Line
- Cu Electroplating Process with Magnetic Field for Flexible Device
- Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning
- INHIBITORY OLIGODEOXYNUCLEOTIDE IMPROVES GLOMERULONEPHRITIS AND PROLONGS SURVIVAL IN MRL-lpr/lpr MICE
- 電子線干渉法による磁性材料観察