Effect of Hydrogen Plasma Treatment on n-InP Surfaces

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-03-15

著者

• Sugino T

  Osaka Univ. Osaka Jpn

• NINOMIYA Hideaki

  Department of Neuropsychiatry, Graduate School of Medical Sciences, Kyushu University

• SHIRAFUJI Junji

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

• Matsuda Kazuko

  Faculty Of Engineering Kanazawa University

• Matsuda K

  Univ. Cambridge Cambridge Gbr

• Matsuda K

  Waseda Univ. Tokyo Jpn

• SUGINO Takashi

  Department of Electrical Engineering, Osaka University

• SAKAMOTO Yoshifumi

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

• Matsuda Kichiro

  Horiba, Ltd.

• Ninomiya Hideaki

  Department Of Neuropsychiatry Faculty Of Medicine Kyushu University

• Sakamoto Y

  Department Of Applied Chemistry Tokyo Metropolitan University

• Sugino T

  Department Of Electrical Engineering. Osaha University

• Ninomiya H

  Kyushu Univ. Fukuoka Jpn

• Shirafuji J

  Fukui Univ. Technol.

• Shirafuji Junji

  Department Of Electrical And Electronic Engineering

• Sugino Takashi

  Department Of Basic Pathology Fukushima Medical University

• NINOMIYA Hideaki

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

関連論文

• Bistable Optically Writable Image Memory Using Optical Feedback
• A Novel Shearing Interferometer with Direct Display of Lens Lateral Aberrations
• Reflection Multiple Beam Wedge Plate Shear Interferometry for Lens Testing
• Association analysis of polymorphisms in the upstream region of the human dopamine D4 receptor gene (DRD4) with schizophrenia and personality traits
• A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
• Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
• High-Field Electron Transport in a-Si:H
• Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium
• Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
• Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
• Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
• Negative Staebler-Wronski Effect in Undoped a-Si:H
• Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
• Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
• Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
• Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
• Characterization of InGaAs Phosphidized by a Plasma Process
• Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
• Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
• Preparation of Bi-Iron-Garnet Films on Platinized Si Substrate with Bi-Substituted Y-Iron-Garnet Template Layer (レーザーによる薄膜形成と制御小特集号)
• Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
• Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
• Deep Electron Traps in n-InP Induced by Plasma Exposure
• Effect of Hydrogen Plasma Treatment on n-InP Surfaces
• Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
• Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
• Effect of Phosphine on Plasma-Induced Traps in n-InP
• Measurement of Surface Fermi Level in Phosphidized GaAs
• Second-Order Piezoresistance Coefficients of p-Type Silicon
• Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
• Effect of Angular Distribution of Ejected Atoms from a Target on the Uniformity of Thickness and Composition of MoSi_x Sputtering Films
• Second-Order Piezoresistance Coefficients of n-Type Silicon
• Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
• Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
• Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
• Hydrogenation of InP by Phosphine Plasma
• Purification and Properties of a Novel Sulfatase from Pseudomonas testosteroni That Hydrolyzed 3β-Hydroxy-5-cholenoic Acid 3-Sulfate
• Accumulation of Translational Inhibitor durig Multi-Hour Cell-Free Protein Synthesis Reaction Using Rabbit Reticulocyte Lysate
• Purification and Properties of Bile Acid Sulfate Sulfatase from Pseudomonas testosteroni
• High Speed Polymerase Chain Reaction in Constant Flow
• Growth Inhibition of Pseudomonas solanacearum by Substituted 3-Indolepropionic Acids and Related Compounds
• Enzymatic Preparation of Aromatic Ethylamines from Aromatic L-Amino Acids
• A Novel Sulfatase from Pseudomonas testosteroni Hydrolyzing Lithocholic Acid Sulfate
• Indole as an Antibacterial Substance against Pseudomonas solanacearum(Organic Chemistry)
• Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
• Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
• Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
• Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
• Photoluminescence and Optical Properties of Ge_Se_x Glasses
• Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
• Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
• The Effects of Genetic Polymorphisms of CYP2C9 and CYP2C19 on Phenytoin Metabolism in Japanese Adult Patients with Epilepsy : Studies in Stereoselective Hydroxylation and Population Pharmacokinetics
• Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
• Auditory P50 obtained with a repetitive stimulus paradigm shows suppression to high-intensity tones
• Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
• Expression of endothelin system in neuroblastic tumors : close association of endothelin-1 and endothelin B receptor expression with differentiation of tumor cells
• Sodium azide induces necrotic cell death in rat squamous cell carcinoma SCC131
• Regular expression of osteopontin in granular cell tumor : Distinctive feature among Schwannian cell tumors
• 脾臓と脾被膜上の多発性上皮嚢胞, およびCA19-9, CA125と可溶性IL-2受容体の高い血清値
• A study of verbal and spatial information processing using event-related potentials and positron emission tomography
• Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
• Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
• Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
• Formation of Rough GaN Surface by Hydrogen Plasma Treatment and Its Application to Field Emitter : Semiconductors
• InSb Carrier Lifetime in High Electric Field
• Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
• Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
• Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
• Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
• Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
• Energy Relaxation Effect of Hot Electrons in GaAs
• Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
• Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
• Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
• Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
• Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
• Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
• Negative Photoconductivity in n-InSb under Transverse Magnetic Field
• Negative Photoconductivity in n-InSb under Transverse Magnetic Field
• Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
• High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
• High-Purity CdTe Single Crystals Grown from Solutions
• Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
• Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
• Effect of Electron Irradiation on Edge Emission Spectra in CdTe
• Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
• Schottky Barrier Height of Phosphidized InGaAs
• Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
• Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
• Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
• Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
• Growth of(111)-Oriented Diamond Grains on Hexagonal GaN
• Field Emission Characteristics from Grains and Polycrystalline Films of Phosphorus-Doped Diamond Grown by Chemical Vapor Deposition
• Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
• Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
• Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
• Lattice Gas Model of the (111)Surface of Ge
• Phase Diagram of the Lattice Gas Model for the(111)Surfaces of Si and Ge : A Hard Hexagon Model with Extended Range Interactions
• Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
• A Study on a Testing Method of Pumpability By Using a Model of Concrete Pump

もっと見る 閉じる

スポンサーリンク