Time of Flight Measurement of Carrier Mobility in Ge_xSe_<1-x> Glasses
スポンサーリンク
概要
- 論文の詳細を見る
Electron and hole drift mobilities have been measured in Ge_xSe_<1-x> glasses (x=0.15, 0.2 and 0.4) by means of the time of flight technique. The hole mobility (8.5-1.6×10^<-2>cm^2/V・sec, 300 K) is smaller than the electron mobility (1.0-7.4×10^<-1>cm^2/V・sec, 300 K) in contrast with the cast of other chalcogenide glasses. The observed mobility is trap-limited for both electrons and holes. The activation energies are 0.28 eV for electrons and 0.42 eV for holes respectively in Ge_<0.2>Se_<0.8> glass.
- 社団法人応用物理学会の論文
- 1978-10-05
著者
-
SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Kim Gi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
関連論文
- Understanding the accumulation features of POPs in squid from the offshore waters of southeast Korea
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- High-Field Electron Transport in a-Si:H
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Specific accumulation of heavy metals in squid collected from offshore Korean waters : preliminary results for offshore biomonitoring and food safety assessment
- C303 ENCLOSED CONVECTION WITH INTERNAL HEAT GENERATION UNDER OSCILLATING BOUNDARY WALL(Mixed convection)
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
- Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
- Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier
- Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated Silicon
- Dangling Bond Creation in Hydrogenated Amorphous Silicon by Light-Soaking
- Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering
- Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
- Variation of Stokes Output with Magnetic Field in InSb Spin-Flip Raman Laser Pumped by a CO_2 Laser
- Characteristics of n-Pb_Sn_Te Spin Flip Raman Laser Pumped by a TE CO_2 Laser
- Effect of Illumination on CdS-LiNbO_3 Separated Medium Convolver
- Hole Transport in Glow-Discharged a-Si:H Films Compensated with Boron
- Effect of Illumination and Bias Field on Semiconductive CdS Monolithic Convolver with High-Resistivity Surface Layer
- Reversible Transformation between Cu_2O and CuO by Ambient Gas Heat Treatment
- Influence of Li_2O on the Viscous Behavior of CaO-Al_2O_3-12 mass% Na_2O-12 mass% CaF_2 Based Slags
- (1S,2S,3E,7E,11E)-3,7,11,15-Cembratetraen-17,2-olide, a Cembrenolide Diterpene from Soft Coral Lobophytum sp., Inhibits Growth and Induces Apoptosis in Human Colon Cancer Cells through Reactive Oxygen Species Generation
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon
- Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge-S Glasses
- Photoelectric Properties of Oxygen-Doped a-Si:H Prepared by rf Sputtering
- Interface State Generation in p-Type Si Metal/Oxide/Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress
- AC Conductivity of Undoped a-Si:H and $\mu$c-Si:H in Connection with Morphology and Optical Degradation
- Microbial inactivation and pesticide removal by remote exposure of atmospheric air plasma in confined environments(BIOCHEMICAL ENGINEERING)