Photoelectric Properties of Oxygen-Doped a-Si:H Prepared by rf Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
It was observed that the incorporation of a small amount of oxygen into sputtered a-Si:H filums considerably enhances the photoconductivity at room temperature in comparison with that in undoped films. The mechanism of the enhancement was investigated in terms of the dangling-bond density, electron mobility and Fermi-level location. The electron lifetime was found to be roughly inversely proportional to the Si dangling-bond density. Time of-flight experiments revealed that the electron mobility at room temperature in slightly oxygen-doped films is higher by about one order of magnitude than that in undoped films. The greatest part of the photoconductivity enhancement could be understood on the basis of an increase in the electron mobility and a reduction in the dangling-bond density.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
-
Shirakawa Kazuhiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
JIRANAPAKUL Koarakot
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
SHIRAKAWA Kazuhiro
Department of electrical Engineering, Faculty of engineering, Osaka university
関連論文
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- High-Field Electron Transport in a-Si:H
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
- Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
- Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier
- Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated Silicon
- Dangling Bond Creation in Hydrogenated Amorphous Silicon by Light-Soaking
- Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering
- Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
- Variation of Stokes Output with Magnetic Field in InSb Spin-Flip Raman Laser Pumped by a CO_2 Laser
- Characteristics of n-Pb_Sn_Te Spin Flip Raman Laser Pumped by a TE CO_2 Laser
- Effect of Illumination on CdS-LiNbO_3 Separated Medium Convolver
- Hole Transport in Glow-Discharged a-Si:H Films Compensated with Boron
- Effect of Illumination and Bias Field on Semiconductive CdS Monolithic Convolver with High-Resistivity Surface Layer
- Reversible Transformation between Cu_2O and CuO by Ambient Gas Heat Treatment
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon
- Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge-S Glasses
- Photoelectric Properties of Oxygen-Doped a-Si:H Prepared by rf Sputtering
- Interface State Generation in p-Type Si Metal/Oxide/Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress
- AC Conductivity of Undoped a-Si:H and $\mu$c-Si:H in Connection with Morphology and Optical Degradation