Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Nakata Jun-ichi
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Inuishi Yoshio
奈良工業高等専門学校
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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IMAO Shozo
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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INUISHI Yoshio
Professor Emeritus, Osaka University
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Miyanishi Atsuhi
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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Kubo Uichi
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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Kubo Uichi
Department Of Electrical Engeneering Faculty Of Science And Technology Kinki University
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Miyanishi Atsuhi
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Imao Shozo
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Inuishi Y
Professor Emeritus Osaka University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inuishi Yoshio
Professor Emeritus Osaka University
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Kubo U
Kinki Univ. Osaka Jpn
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Shirafuji J
Fukui Univ. Technol.
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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