Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Nakata Jun-ichi
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Inuishi Yoshio
奈良工業高等専門学校
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IMAO Shozo
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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INUISHI Yoshio
Professor Emeritus, Osaka University
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TSUCHIDA Kazuhito
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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Tsuchida Kazuhito
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Imao Shozo
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Inuishi Y
Professor Emeritus Osaka University
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Inuishi Yoshio
Professor Emeritus Osaka University
関連論文
- Optical and Electrical Properties of Electrochemically Doped n- and p-Type Polythiophenes
- Formation of Semieonductive Metal-Sulfide at Interface of (SN)_x-Metal Junction
- Carrier Mobility in Poly-p-Phenylenesulfide
- Residual Voltage in Polyethylene
- Effect of Double Doping on Electrical Conductivity of Poly-p-Phenylenesulfide
- Photoconduction in Polytetrafluoroethylene Induced by Vacuum-Ultraviolet Light
- Residual Voltage in Polyethylene
- High-Field Electron Transport in a-Si:H
- Electron-Beam-Induced Conduction in Polystyrene
- Temperature Dependence of Dielectric Breakdown of Hexatriacontane (C_H_) Single Crystal
- High-Field Electron Transport and Hot Electron Phenomena in Hydrogenated Amorphous Silicon Films
- Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Effects of Electron Irradiation on Photo-luminescence Spectra of Si-Doped Melt-Grown n-GaAs
- Characteristics of Polythiophene Battery
- Characteristics of Electro-Optic Device Using Conducting Polymers, Polythiophene and Polypyrrole Films
- Proposal of Electro-Optical Switching and Memory Devices Utilizing Doping and Undoping Processes of Conducting Polymers
- Photoluminescence of Polyacetylene in Near Infrared
- Electrical Properties of Conducting Polymer, Poly-Thiophene, Prepared by Electrochemical Polymerization
- Seedless Crystallization of Levitated Ge and GaSb Spherical Melts under Microgravity
- Gravity-Dependent Silicon Crystal Growth Using a Laser Heating System in Drop Shaft
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Temperature Dependence of Photoconduction in Polyethylene Induced by Vacuum-Ultraviolet Light
- Photoconduction in Polyethylene under Vacuum-Ultraviolet Range
- AC Conductivity of Undoped a-Si:H and $\mu$c-Si:H in Connection with Morphology and Optical Degradation