Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_<1-x>P_x
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-09-20
著者
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Inuishi Yoshio
奈良工業高等専門学校
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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INUISHI Yoshio
Professor Emeritus, Osaka University
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OKA Koji
Department of Internal Medicine, JA Suzuka Hospital
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Oka Koji
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address)matsus
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inuishi Yoshio
Professor Emeritus Osaka University
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KAKIUCHI Takao
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Kakiuchi Takao
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address)matsus
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Shirafuji Junji
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering Osaka University
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