Electrical Resistivity and Negative Magnetoresistance in (SNBr_γ)_x Crystal
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概要
- 論文の詳細を見る
Electrical resistivity, magnetoresistance and their temperattnre dependences in(SNBr,). are measured for various quantity of y. B:/ bromination, negative naag-netoresistance is enhanced at 4.2 K and also appears even at 77 K, at whichtemperattzre negative magnetoresistance is not observed in tzndoped (SN),. Ilhesefeatures are reunarkable for the samples heavily doped and just after doping, andare abated by pumping bromine from (SNBr,), for a few days. The possibleorigins for the anonaalotzs negative unagnetoresistance are discussed taking thesurface state of fiber bundles or crystal due to adsorped bromine into considera-lion.
- 社団法人日本物理学会の論文
- 1980-11-15
著者
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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KANETO Keiichi
Department of Computer Science and Electronics, Kyushu Institute of Technology
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Kaneto Keiichi
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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SASA Shigehiko
Department of Electrical Engineering, Osaka Institute of Technology
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Sasa Shigehiko
Faculty Of Engineering Osaka University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneto K
Faculty Of Engineering Osaka University
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Sasa Shigehiko
Department Of Electrical Engineering Osaka Institute Of Technology
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Kaneto Keiichi
Department of Biological Functions and Engineering, Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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