Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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INOUE Masao
Department of Applied Physics and Chemistry, The University of Electro-Communications
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SHIMADA Akihiro
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Shimada Akihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shimada Akihiro
Department Of Applied Chemistry Tokyo University Of Agriculture & Technology
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Inoue Masao
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inoue Masao
Department Of Applied Physics And Chemistry The University Of Electro-communications
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