Seedless Crystallization of Levitated Ge and GaSb Spherical Melts under Microgravity
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Nakata Jun-ichi
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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INAGAWA Ikuo
Kyosemi Corporation
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INAGAWA Ikuo
Kyoto Semiconductor Corporation, Eniwa Research and Development Center
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Tomozawa Hidemasa
Kyoto Semiconductor Corporation
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Inagawa Ikuo
Kyoto Semiconductor Corporation
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Inagawa Ikuo
Non-oxide Glass R&d Co. Lid.
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Nishimura Y
Chiba Inst. Technol. Chiba Jpn
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NAKATA Josuke
Kyoto Semiconductor Corporation
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KURATANI Noriaki
Kyoto Semiconductor Corporation
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NISHIMURA Yuichi
Kyoto Semiconductor Corporation
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YOKOGAWA Naohiro
Kyoto Semiconductor Corporation
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- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Seedless Crystallization of Levitated Ge and GaSb Spherical Melts under Microgravity
- Gravity-Dependent Silicon Crystal Growth Using a Laser Heating System in Drop Shaft
- AC Conductivity of Undoped a-Si:H and $\mu$c-Si:H in Connection with Morphology and Optical Degradation