Dangling Bond Creation in Hydrogenated Amorphous Silicon by Light-Soaking
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概要
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It has been observed in glow-discharged undoped amorphous hydrogenated silicon (a-Si:H) films that the Fermi level position moves downwards and is pinned near the midgap by a low dose irradiation with gamma-rays. Films irradiated lightly with gamma-rays offer an opportunity for investigating Staebler-Wronski effect without any ambiguity due to Fermi level shift. Under the condition of the pinned Fermi level, we have confirmed a decrease in the electron lifetime and in parallel an increase in the ESR spin density relating to neutral Si dangling bonds after light-soaking.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Shirakawa Kazuhiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nagata Shunsuke
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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