Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Polycrystalline boron nitride (BN) films are synthesized by plasma-assisted chemical vapor deposition using BCl_3 and N_2 as source gases. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements are carried out to characterize the BN films. Capacitance-voltage (C-V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant.
- 社団法人応用物理学会の論文
- 2000-11-01
著者
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SUGINO Takashi
Department of Electrical Engineering, Osaka University
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TAI Tomoyoshi
Department of Electrical Engineering, Osaka University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Tai Tomoyoshi
Department Of Electrical Engineering Osaka University
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