Variation of Surface Potentials of Si-Doped Al_xGa_<1-x>N (O<x<0.87) Grown on AlN/Sapphire Template by Metal-Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 2010-02-25
著者
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Kubo Toshiharu
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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