Growth of Single Crystal Al_xGa_<1-x>N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Al_xGa_<1-x>N(0001) films with flat surfaces in the composition range of x=0.1-0.4 are successfully grown directly on Si(111) using two-flow-channel metalorganic vapor phase epitaxy (MOVPE). Reflection high-energy electron diffraction (RHEED) patterns are spotty for growth temperatures between 1000℃ and 1150℃, indicating that the Al_xGa_<1-x>N film is a single crystal. In addition, good control of the AlN mole fraction (0.1 to 0.4) is achieved by changing the gas ratio of the group III gas sources.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu K
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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HIROSAWA Koji
Department of Electronics, Nagoya University
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Hirosawa Koji
Department Of Electronics Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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