Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_<1-x>As_yP_<1-y>(y<0.01)/(100) GaAs : Optical Properties of Condensed Matter

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概要

• 論文の詳細を見る

• The electrical properties near the heterointerface of In_xGa_<1-x>As_yP_<1-y>(y<0.01) grown on (100) GaAs by liquid phase epitaxy are investigated as a function of the lattice mismatch (Δa/a)⊥. It is shown that the electron mobility is limited by the space-charge scattering which is increased with increasing (Δa/a)⊥. The space-charge scattering due to the lattice-mismatch becomes significant near the heterointerface (≃0.1μm). The in-depth profile shows that the electron mobility is decreased and the electron concentration is increased near the heterointerface (≃0.1μm). This is attributed to the high segregation coefficient of impurities at the initial growth step as well as the misfit dislocation.

• 社団法人応用物理学会の論文
• 1988-09-20

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Zhu Qinsheng

  Department Of Electronics School Of Engineering Nagoya University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

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