Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
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概要
- 論文の詳細を見る
We describe a new method of forming self-organized GaN nanotips by reactive ion etching using chlorine plasma and its mechanism. Nanotips with a density of approximately 8 × 10^9 cm^<-2> have been formed after etching. The nanotips have diameters between 10 and 30nm, a length of about 0.7μm and a high aspect ratio. It is revealed that nanotip formation is attributed to a nanometer-scale mask with a high etch selectivity to GaN. The structure simulated using our formation mechanism is almost similar to the experimental nanotip structure. These results prove the validity of the formation mechanism by nanomasking effect of ionized SiO_2 Sputtered by Cl^+ ions.
- 社団法人応用物理学会の論文
- 2001-12-01
著者
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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YOSHIDA Harumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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URUSHIDO Tatsuhiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Yoshida H
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Urushido Tatsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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