Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy

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概要

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• We carried out the selective area growths of GaN on semipolar (20\bar{2}1), (20\bar{2}\bar{1}), and related non- and semi-polar GaN substrates by metalorganic vapor phase epitaxy. By changing the growth parameters and directions of the SiO<inf>2</inf>stripe mask, the differences in GaN structures between the growths on the different substrates were investigated. In the case of the stripes \parallel a-axis, anisotropic GaN structures with (000\bar{1}) and (10\bar{1}1) facets were obtained for all the non- and semi-polar GaN substrates. On the other hand, in the case of the stripes \perp a-axis, isotropic GaN structures were obtained for the (20\bar{2}1) and (20\bar{2}\bar{1}) GaN substrates. However, the GaN structures between them were quite different. After 120 min of growth, \{11\bar{2}0\} and (20\bar{2}\bar{1}) facets markedly expanded for the (20\bar{2}1) and (20\bar{2}\bar{1}) GaN substrates, respectively. Moreover, by exploiting the effect of growth temperature, the growth of a continuous (20\bar{2}\bar{1}) GaN layer with voids was realized.

• 2013-08-25

著者

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Nagao Satoru

  Mitsubishi Chemical Group Science And Technology Research Center Inc.

• Ma Bei

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Jinno Daiki

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Enatsu Yuuki

  Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan

• Nagao Satoru

  Mitsubishi Chemical Group Science and Technology Research Center, Inc., Yokohama 227-8502, Japan

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