Ma Bei | Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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概要
- 同名の論文著者
- Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japanの論文著者
関連著者
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Ma Bei
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Nagao Satoru
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Weiguo Hu
Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Reina Miyagawa
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Hideto Miyake
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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Kazumasa Hiramatsu
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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Hu Weiguo
Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Li Dabing
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Bei Ma
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Dabing Li
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Jinno Daiki
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Enatsu Yuuki
Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan
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Nagao Satoru
Mitsubishi Chemical Group Science and Technology Research Center, Inc., Yokohama 227-8502, Japan
著作論文
- Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy