Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions

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概要

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• Al0.25Ga0.75N/AlN/GaN heterojunctions with AlN interlayers of various thicknesses were grown on c-plane sapphire by metalorganic vapor phase epitaxy (MOVPE). We have revealed that the AlN interlayer hardly affects morphologies and crystal qualities; however, it prominently enhances the two-dimensional electron gas (2DEG) mobility. The optimum thickness of the AlN interlayer is 1 nm, and the corresponding room temperature Hall mobility and the sheet carrier density are 1700 cm2 V-1 s-1 and $1.27 \times 10^{13}$ cm-2, respectively. Self-consistent calculation results indicates that with increasing AlN thickness, i) the conduction-band discontinuity between AlGaN and GaN linearly increases; ii) the percentage of the total carriers in the AlGaN layer exponentially decreases, and content in the AlN layer exponentially increases.

• 2010-03-25

著者

• Weiguo Hu

  Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Reina Miyagawa

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Hideto Miyake

  Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan

• Kazumasa Hiramatsu

  Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan

• Hu Weiguo

  Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Ma Bei

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Li Dabing

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Bei Ma

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Dabing Li

  Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

関連論文

• Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions
• Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)
• Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy

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