Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)

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概要

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• We investigated the growth of GaN on 3C-SiC fabricated by the deposition and carbonization of a separation by implanted oxygen (SIMOX) surface. The dependences of AlN buffer thickness on the crystalline quality and surface morphology of the GaN grown on 3C-SiC/SIMOX (111) by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) were examined. We studied the stress of GaN by the in situ monitoring of the reflectance and substrate curvature. High-quality GaN with a smooth surface was obtained using an AlN buffer of 10 nm thickness. Moreover, the fabrication of crack-free GaN was achieved using an AlN/GaN superlattice (SL) structure on an AlGaN/AlN buffer.

• 2010-04-25

著者

• Hideto Miyake

  Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan

• Narukawa Mitsuhisa

  Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan

• Asamura Hidetoshi

  Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan

• Kawamura Keisuke

  Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan

• Kazumasa Hiramatsu

  Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan

• Hidetoshi Asamura

  Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan

関連論文

• Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions
• Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)
• Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates

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