Kazumasa Hiramatsu | Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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概要
- Kazumasa Hiramatsu の詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japanの論文著者
関連著者
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Hideto Miyake
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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Kazumasa Hiramatsu
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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Weiguo Hu
Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Reina Miyagawa
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Narukawa Mitsuhisa
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan
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Asamura Hidetoshi
Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan
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Kawamura Keisuke
Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan
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Hidetoshi Asamura
Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan
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Hu Weiguo
Venture Business Laboratory, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Ma Bei
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Li Dabing
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Bei Ma
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Dabing Li
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
著作論文
- Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions
- Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)