Nagao Satoru | Mitsubishi Chemical Group Science And Technology Research Center Inc.
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概要
関連著者
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Nagao Satoru
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Bando Y
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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SAKAMOTO Tsunenori
Electrotechnical Laboratory
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Shimoyama Kenji
Mitsubishi Chemical Co.
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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NAGAO Satoru
Research, Center, Mitsubishi Kasei Co.
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Bando Yoshio
National Institute For Materials Science Advanced Materials Laboratory
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Bando Yoshio
International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims
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Nagao S
Mitsubishi Chemical Corp. Ibaraki Jpn
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Sakamoto Tsunenori
Electrotechnical Laboratory Tsukuba
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Namita Hideo
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Shimoyama Kenji
Mitsubishi Chemical Corporation
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Yamaji Kazuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Hayashi Yuichirou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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SAKAMOTO Kinihiro
Electrotechnical Laboratory, Tsukuba
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HASHIGUTCHI Gen
Chuo University
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KUNIYOSHI Katsuya
Meiji University
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Bando Yoshio
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
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Bando Yoshio
Advanced Materials Laboratory National Institute For Materials Science
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Yamaji Kazuki
Department Of Electronic Science And Engineering Kyoto University
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Hayashi Yuichirou
Department Of Electronic Science And Engineering Kyoto University
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Sakamoto Kinihiro
Electrotechnical Laboratory Tsukuba
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Ma Bei
Department of electrical and electronic Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Jinno Daiki
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Enatsu Yuuki
Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan
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Nagao Satoru
Mitsubishi Chemical Group Science and Technology Research Center, Inc., Yokohama 227-8502, Japan
著作論文
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy