Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

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概要

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• The crystalline quality of AlGaN with high AlN molar fraction grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) was improved by using high-quality epitaxial AlN film on sapphire (0001). Atomically flat AlxGa1-xN ($0.2<x<0.8$) without any cracks was fabricated on the epitaxial AlN film. Lattice constants of the Al0.48Ga0.52N and the AlN at growth temperature were estimated from high-temperature X-ray diffraction measurement. The results showed that the in-plane lattice constant of the Al0.48Ga0.52N was stress-free or slightly compressed even at the growth temperature. The smaller in-plane lattice constant of AlN than that of AlGaN is considered to play a great important role in restraining generation of cracks.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-06-01

著者

• SHIBATA Tomohiko

  Department of Chemistry, Graduate School of Science, Kyoto University

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

• Kida Yoshihiro

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

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