Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
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概要
- 論文の詳細を見る
Bulk CuGaS_2 single crystals have been grown using a modified Bridgman technique from In solutions (solution Bridgman method). At temperatures below 1020℃, where a miscibility gap exists in the In solutions with a stoichiometric CuGaS_2 solute, sulfur-excess In solutions are required for obtaining single crystals. The crystals are generally CuGa_xIn_<1-x>S_2 alloys with (1-x)=0.03-0.06 due to partial occupation of Ga sites by In atoms.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Sugiyama Koichi
Department of Cardiovascular Medicine, Graduate School of Medical Sciences, Kumamoto University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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