X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
スポンサーリンク
概要
- 論文の詳細を見る
The tilt and twist of GaN prepared by facet-controlled epitaxial lateral overgrowth (FACELO) were evaluated by the X-ray rocking curve measurement of symmetric and asymmetric reflections. Compared to the underlying GaN, the tilt and twist values became substantially smaller at 130 and 250 arcsec, respectively, which are consistent with published results of transmission electron microscopy and cathode luminescence analyses. Moreover, FACELO-GaN is almost free of small angle tilt boundaries in contrast to GaN prepared by simple epitaxial lateral overgrowth.
- Japan Society of Applied Physicsの論文
- 2003-07-01
著者
-
Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
-
Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
-
Shimizu Masaya
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
-
IYECHIKA Yasushi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
-
Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
-
Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
-
Iyechika Yasushi
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
関連論文
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
- Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
- Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Future Technology Trends on Magneto-Optical Recording
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- Field Emission from GaN Self-Organized Nanotips
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light
- Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Phase Diagram of the CuGaS_2-In Pseudobinary System
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
- Growth of CuGaS_2 Single Crystals by Traveling Heater Method
- Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
- Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
- Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
- Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
- Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
- Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
- Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer