0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)

概要

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Ultra-low-power-consumption and high-speed DCFL circuits have been fabricated by using 0.2-μm Y-shaped gate E/D-heterojunction-FETs (HJFETs) with a high-aspect-ratio gate-structure, which has an advantage of reducing the gate-fringing capacitance (C_f) to about a half of that of a conventional low-aspect-ratio one. A fabricated 51-stage ring oscillator with the 0.2-μm Y-shaped gate n-AlGaAs/i-InGaAs E/D-HJFETs shows the lowest power-delay product of 0.21 fJ with an unloaded propagation delay of 34.9ps at a supply voltage (V_<DD>) of 0.4 V. We also analyze the DCFL switching characteristics by taking into account the intrinsic gate-to-source capacitance (C^<int>_<gs>) and the C_f. The analysis results for the power-delay products agree well with our experimental results. Our analysis also indicates the DCFL circuit with the high-aspect-ratio Y-shaped gate E/D-HJFETs can reduce the power-delay products by 35% or more below 0.25-μm gate-length as compared to conventional ones with the low-aspect-ratio Y-shaped gate HJFETs. These results clarify that the C_f-reduction of the Y-shaped gate HJFETs is more effective in improving the power-delay products than reducing the gate-length.
社団法人電子情報通信学会の論文
1999-03-25